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| Ultra-Fast-Recovery Rectifier Diodes (Power Surface Mount) Absolute Maximum Ratings Parameter Type No. VRM (V) IF (AV) (A) IFSM (A) 50Hz Half-cycle Sinewave Single Shot Tj (C) Tstg (C) VF (V) max per element IR (A) IF (A) Electrical Characteristics (Ta = 25C) trr trr IR (H) (ns) (ns) (mA) IF/IRP (mA) IF/IRP (mA) Others Rth ( j-c) (C/ W) Mass Fig. (g) VR = VRM VR=VRM, Ta=100C max per element max per element SPX-G32S 200 3.0 6.0 50 -40 to +150 0.98 3.0 80 50 10 30 100/100 25 100/200 5.0 0.41 A SPX-62S SPX-G32S Tc--IF(AV) Derating 4 Average Forward Current IF(AV) (A) VR=200V VF--IF Characteristics (Typical) 50 IFSM (A) 50 IFMS Rating IFSM (A) 10 3 Sinewave D.C. Forward Current IF (A) 40 20ms 1 Peak Forward Surge Current 30 2 t /T = 1/6 1 0.1 Ta = 150C 100C 60C 25C 20 t /T = 1/3 t /T = 1/2 0.01 10 0 120 125 130 135 140 145 Case Temperature Tc (C) 150 0.001 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Forward Voltage VF (V) 1.4 1 5 10 Overcurrent Cycles 50 SPX-62S 10 Average Forward Current IF(AV) (A) Tc--IF(AV) Derating VR=200V VF--IF Characteristics (Typical) 50 10 Forward Current IF (A) IFSM (A) 80 IFMS Rating IFSM (A) 8 20ms 6 1 D.C. Peak Forward Surge Current t /T = 1/2 60 40 4 2 Sinewave t /T = 1/3 t /T = 1/6 0.1 Ta = 150C 100C 60C 25C 0.01 20 0 60 80 100 120 140 160 0.001 0 0 0.2 Case Temperature Tc (C) 0.4 0.6 0.8 1.0 1.2 Forward Voltage VF (V) 1.4 1 5 10 Overcurrent Cycles 50 (Unit: mm) Flammability: UL94V-0 or Equivalent 1.7 0.5 5.40.4 2.9 1.37 0.7 5.0 5.5 0.4 1.2max 2.5 0.4 1.150.1 2.290.5 2.290.5 4.9 0 to 0.25 0.5 0.2 0.8 0.1 0.8 0.1 0.16 External Dimensions Fig. A 6.5 0.4 2.3 0.4 0.55 0.1 5.4 4.1 1 2 (Common to backside of case) Cathode Cathode (Common) 3 Anode Anode 0.55 0.1 1.5 max 1 2 3 Type No. Polarity Lot No. SPX-G32S SPX-62S N.C Anode 68 |
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